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Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

机译:CLIC顶点检测器的电容耦合HV / HR-CMOS传感器芯片的特性

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摘要

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128 × 128 square pixels with 25 μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (∼ 20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ∼ 20 ns for a power consumption of 5 μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (∼ 20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.
机译:在CLIC顶点检测器研究的框架中,已经考虑了有源传感器和读出ASIC之间的电容耦合。 CLICpix电容耦合像素检测器(C3PD)是高压CMOS传感器芯片,为此目的在商用180 nm HV-CMOS工艺中生产。该传感器被设计为连接到CLICpix2读出芯片。因此,它与读出芯片的尺寸相匹配,具有间距为25μm的128×128正方形像素的矩阵。传感器芯片的基板电阻率标准值为20Ωcm,并且在接收和测试电容耦合组件之前已在独立测试模式下进行了表征。独立的测量结果显示,对于5μW/像素的功耗,上升时间约为20 ns。预计将生产具有更高基板电阻率晶圆(约20、80、200和1000Ωcm)的C3PD HV-CMOS传感器芯片。使用将来的带有读出芯片的组件,将研究更高的衬底电阻率的预期好处。

著录项

  • 作者

    Kremastiotis, Iraklis;

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  • 年度 2017
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  • 原文格式 PDF
  • 正文语种 eng
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